1N60P [BL Galaxy Electrical]

SMALL SIGNAL SCHOTTKY DIODES; 小信号肖特基二极管
1N60P
型号: 1N60P
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

SMALL SIGNAL SCHOTTKY DIODES
小信号肖特基二极管

小信号肖特基二极管
文件: 总2页 (文件大小:140K)
中文:  中文翻译
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GALAXY ELECTRICAL  
1N60P  
BL  
VOLTAGE RANGE: 45 V  
CURRENT: 0.1 A  
SMALL SIGNAL SCHOTTKY DIODES  
FEATURES  
Metal sillicon junction majority carrier conduction  
High current capability,Low forward voltage drop  
Extremely low reverse current IR  
DO - 35(GLASS)  
Ultra speed switching characteristics  
Small temperature coefficient of forward  
ffffff characteristics  
Satisfactory wave detection efficiency  
For use in RECORDER. TV. RADIO. TELEPHONE  
as detectors,super high speed switching circuits,  
small current rectifier  
MECHANICAL DATA  
Case:JEDEC DO--35,glass case  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
ABSOLUTE RATINGS(LIMITING VALUES)  
Parameters  
Value  
Symbols  
UNITS  
1N60P  
Repetitive peak reverse voltage  
VRRM  
IF  
45  
V
Forw ard continuous current  
TA=25  
50  
500  
mA  
mA  
Peak forw ard surge current (t=1s)  
Storage and junction temperature range  
IFSM  
TSTG/TJ  
TL  
XX- 55 ---- + 125  
230  
Maximum lead temperature for soldering during 10s at 4mm from case  
ELECTRICAL CHARACTERISTICS  
Value  
Parameters  
Symbols  
VF  
Test Conditions  
UNITS  
V
Min.  
Typ.  
Max.  
0.5  
IF=1mA  
IF=200mA  
0.24  
Forward voltage  
Reverse current  
0.65  
0.5  
1.0  
1.0  
VR=15V  
A
pF  
%
IR  
Junction capacitance  
VR=10V f=1MHz  
6.0  
CJ  
V=3V f=30MHz  
l
Detection efficiency (See FIG. 4)  
Reverse recovery time  
60.0  
CL=10pF RL=3.8K  
IF=IR=1mA Irr=1mA RC=100  
1.0  
ns  
trr  
Thermal resistance junction to ambient  
400  
Rθ  
/W  
JA  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0265007  
RATINGS AND CHARACTERISTIC CURVES  
1N60P  
FIG.1 -- FORWARD CURRENT VERSUS FORWARD  
VOLTAGE (TYPICAL VALUES)  
FIG.2 -- REVERSE CURRENT VERSUS  
CONTINUOUS REVERSE VOLTAGE  
mA  
µA  
0.70  
500  
450  
0.60  
0.50  
400  
IF  
350  
300  
250  
200  
IR  
0.40  
0.30  
0.20  
150  
100  
50  
0.10  
0
0
0
0.2  
0.4  
0.6  
0.8  
1.0 V  
0
5
10  
15  
20  
25  
30  
V
VF  
VR  
FIG.3 -- JUNCTION CAPACITANCE VERSUS CONTINUOUS  
REVERSE APPLIED VOLTAGE  
FIG.4 -- DETECTION EFFICIENCY  
MEASUREMENT CIRCUIT  
output  
D.U.T  
CL  
10PF  
RL  
3.8K  
Input:3VRMS  
www.galaxycn.com  
2.  
Document Number 0265007  
BLGALAXY ELECTRICAL  

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